Silicon nanoclusters formation in silicon dioxide by high power density electron beam

被引：11

作者：

Kolesnikova, E. V. ^{[1
]}

Zamoryanskaya, M. V. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期

关键词：

SIO2;

D O I：

10.1016/j.physb.2009.08.133

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

New method of silicon nanoclusters growth was proposed. Silicon nanoclusters are formed in silicon dioxide under high power density electron beam irradiation. The irradiated region of SiO2 is overheating due to low heatconductivity. The temperature of overheating is depended on electron current density. It was estimated by Monte-Carlo method. This work was devoted to study of nanoclusters formation at different electron beam power density. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4653 / 4656

页数：4

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