Non-destructive parameters extraction for IGBT spice model and compared with measurements

被引：3

作者：

Yuan, SC ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 01期

关键词：

IGBT; VCR; model; spice; parameter-extraction;

D O I：

10.1016/j.sse.2004.04.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A subcircuit based model for the insulated gate bipolar transistor (IGBT) which is fully spice compatible is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively modeled as a voltage controlled resistor (VCR). Based on analytical equation describing the semiconductor device physics, the model parameters are extracted accurately via measured data without devices destruction. Employing the MOS-level-8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence. The simulation results are verified by comparison with measurement results and found to be in good agreement. The average error is within 8%, which is better than some previously reported results of semi-mathematical IGBT models. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：123 / 129

页数：7

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