Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO

被引:17
|
作者
Aliev, GN [1 ]
Bingham, SJ
Wolverson, D
Davies, JJ
Makino, H
Ko, HJ
Yao, T
机构
[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England
[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1103/PhysRevB.70.115206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Optically detected magnetic resonance (ODMR) experiments on epitaxial nitrogen-doped ZnO show spectra due to (i) a shallow donor with the full wurtzite symmetry, (ii) a previously unobserved spin-1/2 center of axial symmetry whose principal axis is tilted slightly away from the crystal c axis, and (iii) a spin-1 triplet state of orthorhombic symmetry. The spin-1/2 center has a g tensor that is of a different form from that of previously reported ODMR spectra for ZnO and is consistent with a model that contains a zinc interstitial, possibly in association with a nitrogen atom. The g values for the triplet state are the average of those for a shallow donor and the spin-1/2 center, and the spectrum is thus assigned to a pair of such centers strongly coupled by a spin-exchange interaction.
引用
收藏
页码:115206 / 1
页数:10
相关论文
共 50 条
  • [31] Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN
    Koschnick, FK
    Michael, K
    Spaeth, JM
    Beaumont, B
    Gibart, P
    Calleja, E
    Munoz, E
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (12) : 1351 - 1355
  • [32] Optically detected magnetic resonance study of defects in undoped, Be-doped, and Mg-doped GaN
    F. K. Koschnick
    K. Michael
    J. -M. Spaeth
    B. Beaumont
    P. Gibart
    E. Calleja
    E. Munoz
    Journal of Electronic Materials, 2000, 29 : 1351 - 1355
  • [33] OPTICALLY DETECTED MAGNETIC-RESONANCE OF NICKEL-DOPED SILVER-CHLORIDE
    MARCHETTI, AP
    SCOZZAFAVA, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (01): : 441 - 445
  • [34] Magnetic resonance of epitaxial layers detected by photoluminescence
    Kennedy, TA
    Glaser, ER
    IDENTIFICATION OF DEFECTS IN SEMICONDUCTORS, 1998, 51 : 93 - 136
  • [35] Hole traps in nitrogen-doped ZnSe epitaxial layers
    Matsumoto, T
    Egashira, K
    Kato, T
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 280 - 283
  • [36] NUCLEAR-MAGNETIC-RESONANCE STUDY OF HEAVILY NITROGEN-DOPED SILICON CARBIDE
    ALEXANDER, MN
    PHYSICAL REVIEW, 1968, 172 (02): : 331 - +
  • [37] Optically detected magnetic resonance investigations of diluted magnetic semiconductors
    Godlewski, Marek
    OPTICA APPLICATA, 2006, 36 (2-3) : 271 - 283
  • [38] First-principles prediction of the electronic and magnetic properties of nitrogen-doped ZnO nanosheets
    Zheng, Fu-bao
    Zhang, Chang-wen
    Wang, Pei-ji
    Luan, Hang-xing
    SOLID STATE COMMUNICATIONS, 2012, 152 (14) : 1199 - 1202
  • [40] A study on defect formation and magnetic properties of nitrogen-doped ZnO nanowires by the first principles
    Shi, Li-Bin
    Fei, Ying
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2012, 324 (19) : 3105 - 3112