Epitaxial Lift-Off of Ultra-Thin GaAs Solar Cells with Textured Back Contact Layer and Diffuse Silver Mirror

被引：0

作者：

van der Woude, Daan ^{[1
]}

van Eerden, Maarten ^{[1
]}

Mulder, Peter ^{[1
]}

Bauhuis, Gerard J. ^{[1
]}

Vlieg, Elias ^{[1
]}

Schermer, John J. ^{[1
]}

机构：

[1] Radboud Univ Nijmegen, Dept Appl Mat Sci, Inst Mol & Mat, Nijmegen, Netherlands

来源：

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年

关键词：

ultra-thin; GaAs; epitaxial lift-off; light-trapping;

D O I：

10.1109/pvsc45281.2020.9300588

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Ultra-thin GaAs solar cells have the benefits of cost reduction and increased radiation tolerance for space applications, but this comes at the cost of reduced photon absorption. In this work, invertedly grown ultra-thin GaAs solar cells with a light-confining diffuse silver back mirror are obtained with epitaxial lift-off. This is achieved by wet chemical etching of the rear contact layer in a grid pattern to ensure compatibility with the epitaxial lift-off process. The textured cells demonstrate strong light-trapping effects and a relative increase of 18.8% in short-circuit current density is achieved with respect to equivalent planar cells.

引用

页码：431 / 433

页数：3

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