Thin-film devices for low power applications

被引：18

作者：

Monfra, S. ^{[1
]}

Fenouillet-Beranger, C. ^{[2
]}

Bidal, G. ^{[1
]}

Boeuf, F. ^{[1
]}

Denorme, S. ^{[1
]}

Huguenin, J. L. ^{[1
]}

Samson, M. P. ^{[1
]}

Loubet, N. ^{[1
]}

Hartmann, J. M. ^{[2
]}

Campidelli, Y. ^{[1
]}

Destefanis, V. ^{[1
]}

Arvet, C. ^{[1
]}

Benotmane, K. ^{[2
]}

Clement, L. ^{[1
]}

Faynot, O. ^{[2
]}

Skotnicki, T. ^{[1
]}

机构：

[1] STMicroelectronics, F-38920 Crolles, France

[2] MINATEC, CEA LETI, F-38054 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 02期

关键词：

FDSOI; SON; Ultra-Thin Body devices; Localized SOI; Bulk; Low power; SOI TECHNOLOGY; SIGE; BOX; SELECTIVITY; INTEGRATION; SILICON; GATE;

D O I：

10.1016/j.sse.2009.12.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Power consumption and matching are the principal issues at the 32 nm node and below In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS In this paper we present thin-film technologies (FDSOI, LSOI and bulk+) leading to the integration of single gated thin films devices for 22 nm nodes and below. (C) 2009 Elsevier Ltcl All rights reserved

引用

页码：90 / 96

页数：7

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