Anisotropic Transformation of 4H-SiC Etching Shapes by High-Temperature Annealing and Its Enhancement by Ion Implantation

被引：5

作者：

Kawada, Yasuyuki ^{[1
]}

Tawara, Takeshi ^{[1
]}

Nakamura, Shun-ichi ^{[1
]}

Tsuji, Takashi ^{[1
]}

Gotoh, Masahide ^{[1
]}

Iwamuro, Noriyuki ^{[1
]}

机构：

[1] Fuji Elect Holdings Co Ltd, Adv Technol Lab, Tokyo 1918502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

SILICON-CARBIDE; GROWTH;

D O I：

10.1143/JJAP.49.040203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transformation of 4H-SiC etching shapes by high-temperature annealing was investigated. Although the opening of the etching mask was circular, the resulting etched shape was a hexagon, dodecagon, or rounded polygon with more edges, depending on the diameter. A hexagon was transformed into a dodecagon following high-temperature annealing, and a dodecagon was transformed into a rounded polygon. (C) 2010 The Japan Society of Applied Physics

引用

页码：0402031 / 0402033

页数：3

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