Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

被引:28
作者
Gong, Zheng [1 ,2 ]
机构
[1] Guangdong Acad Sci, Inst Semicond, 363 Changxing Rd, Guangzhou 510650, Peoples R China
[2] Foshan Debao Display Technol Co Ltd, Golden Valley Optoelect, Room 508-1,Level 5,Block A, Nanhai Dist 528200, Foshan, Peoples R China
关键词
layer transfer; chip transfer; hetero-integration; micro-LED displays; flexible electronics; LIGHT-EMITTING-DIODES; EPITAXIAL LIFT-OFF; THIN-FILM TRANSISTORS; TRANSFER PRINTING TECHNIQUES; TANDEM SOLAR-CELLS; HIGH-PERFORMANCE; LARGE-AREA; HIGH-RESOLUTION; HIGH-EFFICIENCY; LOW-COST;
D O I
10.3390/nano11040842
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.
引用
收藏
页数:41
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