Characteristics of (Pb,Sr)TiO3/ZrO2 structures on Si and SiON/Si substrates

被引：25

作者：

Chen, Hung-Yao ^{[1
]}

Wu, Jenn-Ming

Huang, Hsin-Erh

Bor, Hui-Yun

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Chung Shan Inst Sci & Technol, Mat & Electron Opt Res Div, Tao Yuan 325, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期

关键词：

D O I：

10.1063/1.2712807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ferroelectric (Pb,Sr)TiO3 (PST) thin film with ZrO2 insulating buffer on Si and SiON(3 nm)/Si substrates was fabricated by rf magnetron sputtering. ZrO2 demonstrates excellent insulating properties on either Si or SiON/Si substrates. The metal-ferroelectric-insulator-semiconductor structure shows low leakage currents and exhibits clockwise capacitance-voltage hysteresis loops which are due to the ferroelectric polarization of the PST films. The maximum memory windows of the hysteresis loops are 0.8 and 1.37 V, respectively for PST/ZrO2 films on Si and SiON/Si substrates. This is of potential as memory devices. The charge injection effect under large sweeping voltages is discussed. (c) 2007 American Institute of Physics.

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页数：3

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