Ultra-low temperature anodic bonding of silicon and glass based on nano-gap dielectric barrier discharge

被引：5

作者：

Yao Fu-rong ^{[1
,2
,3
,4
]}

Pan Ming-qiang ^{[1
,2
,3
,4
]}

Zhu Zong-jian ^{[1
,2
,3
,4
]}

Liu Ji-zhu ^{[1
,2
,3
,4
]}

Wang Yang-jun ^{[1
,2
,3
,4
]}

机构：

[1] Soochow Univ, Coll Mechatron Engn, Suzhou 215123, Peoples R China

[2] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China

[3] Soochow Univ, Jiangsu Key Lab Adv Robot Technol, Suzhou 215123, Peoples R China

[4] Soochow Univ, Robot & Microsyst Ctr, Suzhou 215123, Peoples R China

来源：

JOURNAL OF CENTRAL SOUTH UNIVERSITY | 2021年 / 28卷 / 02期

关键词：

dielectric barrier discharge; anodic bonding; ultra-low temperature;

D O I：

10.1007/s11771-021-4607-z

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

The article improves the process of dielectric barrier discharge (DBD) activated anode bonding. The treated surface was characterized by the hydrophilic surface test. The results showed that the hydrophilic angle was significantly reduced under nano-gap conditions and the optimal discharge voltage was 2 kV Then, the anodic bonding and dielectric barrier discharge activated bonding were performed in comparison experiments, and the bonding strength was characterized by tensile failure test. The results showed that the bonding strength was higher under the nano-gap dielectric barrier discharge. This process completed 110 degrees C ultra-low temperature anodic bonding and the bonding strength reached 2 MPa. Finally, the mechanism of promoting bonding after activation is also discussed.

引用

页码：351 / 360

页数：10

共 28 条

[1]

Bargiel S., 2013, P SPIE INT SOC OPTIC, V8616, P5

[2] Electron-beam microcolumns for lithography and related applications [J].