Comparative Study of Charge Transport in Si and Ge Nanowires

被引：0

作者：

Verma, A. ^{[1
]}

Buin, A. K. ^{[2
]}

Anantram, M. P. ^{[3
]}

机构：

[1] Texas A&M Univ, Dept Elect Engn & Comp Sci, Kingsville, TX USA

[2] Univ Montreal, Dept Chim, Montreal, PQ, Canada

[3] Univ Washington, Dept Elect Engn, Seattle, WA USA

来源：

2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年

关键词：

Germanium nanowires; silicon nanowires; low-field mobility; high-field transport; ensemble Monte Carlo;

D O I：

10.1109/NMDC.2009.5167559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on detailed calculations of charge mobility in small diameter Ge nanowires, and a comparison with equivalent diameter Si nanowires. The basis for the calculations is provided by band structure calculations within a sp(3)d(5)s* tight-binding scheme. Charge-phonon scattering rates are evaluated using Fermi's Golden Rule. Mobility calculations are performed using multi-subband momentum relaxation time approximation. In addition, high-field charge transport is also compared among the two classes of materials. High-field transport results are evaluated using ensemble Monte Carlo simulation. High-field transport behavior is found to be qualitatively similar between Si and Ge nanowires, while low-field mobility results show interesting behavior when compared to bulk Si and Ge. Besides providing. a comparative analysis of the behavior of these materials, our work also helps to place an upper bound on their expected electronic response.

引用

页码：64 / +

页数：2

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