Comparative Study of Charge Transport in Si and Ge Nanowires

被引：0

作者：

Verma, A. ^{[1
]}

Buin, A. K. ^{[2
]}

Anantram, M. P. ^{[3
]}

机构：

[1] Texas A&M Univ, Dept Elect Engn & Comp Sci, Kingsville, TX USA

[2] Univ Montreal, Dept Chim, Montreal, PQ, Canada

[3] Univ Washington, Dept Elect Engn, Seattle, WA USA

来源：

2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年

关键词：

Germanium nanowires; silicon nanowires; low-field mobility; high-field transport; ensemble Monte Carlo;

D O I：

10.1109/NMDC.2009.5167559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on detailed calculations of charge mobility in small diameter Ge nanowires, and a comparison with equivalent diameter Si nanowires. The basis for the calculations is provided by band structure calculations within a sp(3)d(5)s* tight-binding scheme. Charge-phonon scattering rates are evaluated using Fermi's Golden Rule. Mobility calculations are performed using multi-subband momentum relaxation time approximation. In addition, high-field charge transport is also compared among the two classes of materials. High-field transport results are evaluated using ensemble Monte Carlo simulation. High-field transport behavior is found to be qualitatively similar between Si and Ge nanowires, while low-field mobility results show interesting behavior when compared to bulk Si and Ge. Besides providing. a comparative analysis of the behavior of these materials, our work also helps to place an upper bound on their expected electronic response.

引用

页码：64 / +

页数：2

共 50 条

[21] Understanding doping at the nanoscale: the case of codoped Si and Ge nanowires [J].

Amato, Michele ;

Rurali, Riccardo ;

Palummo, Maurizia ;

Ossicini, Stefano .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (39)

[22] Effects of transverse geometry on the thermal conductivity of Si and Ge nanowires [J].

Heris, Hadi Rezaie ;

Kateb, Movaffaq ;

Erlingsson, Sigurdur I. ;

Manolescu, Andrei .

SURFACES AND INTERFACES, 2022, 30

[23] Atomistic Design of High Thermoelectricity on Si/Ge Superlattice Nanowires [J].

Chen, Xin ;

Wang, Ziwei ;

Ma, Yanming .

JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (42) :20696-20702

[24] Effect of impurities on charge and heat transport in tubular nanowires [J].

Heris, Hadi Rezaie ;

Klausen, K. O. ;

Sitek, Anna ;

Erlingsson, Sigurdur, I ;

Manolescu, Andrei .

NANOTECHNOLOGY, 2023, 34 (33)

[25] Influence of Different Carrier Gases, Temperature, and Partial Pressure on Growth Dynamics of Ge and Si Nanowires [J].

Forrer, Nicolas ;

Nigro, Arianna ;

Gadea, Gerard ;

Zardo, Ilaria .

NANOMATERIALS, 2023, 13 (21)

[26] Synthesis of Sn-catalyzed Ge nanowires and Ge/Si heterostructures via a gradient method [J].

Zhu, Xianjun ;

Shen, Ya ;

Florea, Ileana ;

Cabarrocas, Pere Roca i ;

Chen, Wanghua .

MATERIALS LETTERS, 2025, 379

[27] Phonon transport in Si nanowires with elastically dissimilar barriers [J].

Oh, Jung Hyun ;

Jang, Moon-Gyu ;

Shin, Mincheol ;

Lee, Seok-Hee .

APPLIED PHYSICS LETTERS, 2012, 100 (11)

[28] Transport properties of Sb-doped Si nanowires [J].

Nukala, Prathyusha ;

Sapkota, Gopal ;

Gali, Pradeep ;

Philipose, U. .

JOURNAL OF CRYSTAL GROWTH, 2012, 353 (01) :140-144

[29] Tuning thermal transport in Si nanowires by isotope engineering [J].

Royo, Miquel ;

Rurali, Riccardo .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2016, 18 (37) :26262-26267

[30] Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires [J].

Wen, C. -Y. ;

Tersoff, J. ;

Hillerich, K. ;

Reuter, M. C. ;

Park, J. H. ;

Kodambaka, S. ;

Stach, E. A. ;

Ross, F. M. .

PHYSICAL REVIEW LETTERS, 2011, 107 (02)

← 1 2 3 4 5 →