Study of GaN epilayers growth on freestanding Si cantilevers

被引：7

作者：

Chen, Jing ^{[1
]}

Wang, Xi ^{[1
]}

Wu, Aimin ^{[1
]}

Zhang, Bo ^{[1
]}

Wang, Xi ^{[1
]}

Wu, Yuxin ^{[2
]}

Zhu, Jianjun ^{[2
]}

Yang, Hui ^{[2
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 01期

关键词：

FABRICATION; SILICON; MEMS; NITRIDE;

D O I：

10.1016/j.sse.2009.10.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Five-micron thick freestanding Si cantilevers were fabricated on bulk Si (1 1 1) substrates with surface/bulk micromachining (SBM) process. Then 1-mu m thick GaN layers were deposited on the Si cantilevers by metal-organic chemical vapor deposition (MOCVD). Epilayers on cantilever areas were obtained crack-free, and the photoluminescence (PL) spectra verified the stress reduction and better material quality in these suspended parts of GaN. Back sides of the cantilevers were also covered with GaN layers, which prevented the composite beams from bending dramatically. This paper had proved the feasibility of integrating high-quality GaN epilayers with Si micromechanical structures to realize GaN-based micro electro-mechanical system (MEMS). (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：4 / 7

页数：4

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