Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

被引：27

作者：

Chen, Q. ^{[1
]}

Yang, M. ^{[1
]}

Feng, Y. P. ^{[1
]}

Chai, J. W. ^{[2
]}

Zhang, Z. ^{[2
]}

Pan, J. S. ^{[2
]}

Wang, S. J. ^{[2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 16期

关键词：

THIN-FILM TRANSISTORS; PRECISE DETERMINATION; MOLECULAR-DYNAMICS; SEMICONDUCTORS; METALS; ALIGNMENT; OXIDES;

D O I：

10.1063/1.3253420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality HfO2 dielectrics have been grown on ZnO (0001) substrates. The valence- and conduction-band offsets for HfO2/ZnO (0001) heterojunctions have been determined to be 0.14 +/- 0.05 and 2.29 +/- 0.05 eV, respectively, by using in situ x-ray photoemission spectroscopy. First-principles calculations show that the valence-band offset at the HfO2/ZnO (0001) interface of the most energetically favorable interface structure is 0.40 eV, which is consistent with the experimental results. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3253420]

引用

页数：3

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