Strain Effect on Thermoelectric Performance of InSe Monolayer

被引:72
作者
Wang, Qian [2 ]
Han, Lihong [2 ]
Wu, Liyuan [2 ]
Zhang, Tao [1 ]
Li, Shanjun [1 ]
Lu, Pengfei [2 ]
机构
[1] Sichuan Univ, Coll Elect Engn & Informat Technol, Chengdu 610065, Sichuan, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 01期
关键词
Two-dimensional materials; Thermoelectric; Strain engineering; BAND-GAP; MOBILITY; ENHANCEMENT;
D O I
10.1186/s11671-019-3113-9
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Strain engineering is a practical method to tune and improve the physical characteristics and properties of two-dimensional materials, due to their large stretchability. Tensile strain dependence of electronic, phonon, and thermoelectric properties of InSe monolayer are systematically studied. We demonstrate that the lattice thermal conductivity can be effectively modulated by applying tensile strain. Tensile strain can enhance anharmonic phonon scattering, giving rise to the enhanced phonon scattering rate, reduced phonon group velocity and heat capacity, and therefore lattice thermal conductivity decreases from 25.9 to 13.1 W/mK when the strain of 6% is applied. The enhanced figure of merit indicates that tensile strain is an effective way to improve the thermoelectric performance of InSe monolayer.
引用
收藏
页数:9
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