Investigation of thermoluminescence characteristics of NaSrBO3:Sm3+ phosphor against 120 MeV Ag9+ ion and γ-ray irradiation prepared by different methods

被引:12
作者
Bedyal, A. K. [1 ,2 ]
Kumar, Vinay [1 ,2 ]
Swart, H. C. [1 ]
机构
[1] Univ Free State, Dept Phys, POB 339, ZA-9300 Bloemfontein, South Africa
[2] Shri Mata Vaishno Devi Univ, Dept Phys, Katra 182320, Jammu & Kashmir, India
基金
新加坡国家研究基金会;
关键词
Thermoluminescence; Swift heavy ions; Borates; Dosimetry; RED EMITTING PHOSPHOR; LUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE; EFFICIENCY; STABILITY; CRYSTALS; CENTERS;
D O I
10.1016/j.jlumin.2017.03.068
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Evaluation of thermoluminescence (TL) properties of gamma-ray and heavy ion (120 MeV Ag9+) exposed NaSrBO3:Sm3+ phosphor prepared by solution combustion (SC) method was done and the results were compared to its counterpart prepared by solid state (SS) method. The TL study was carried out after exposing the samples to gamma-radiation and swift heavy ion (SHI) in the range of 0.01-5 kGy and 1 x 10(11)-1 x 10(13) ions/cm(2), respectively. The TL glow curves for gamma-ray exposed samples exhibited a lower temperature peak (T-m1) similar to at 415 +/- 5 K and a higher temperature (T-m2) peak similar to at 567 +/- 15 K for the samples synthesized by the SS method whereas the glow peaks position shifted towards lower temperature for the samples synthesized by SC method. On the other hand the glow curves possessed the complex nature against SHI irradiation due to modification done by the SHI ions through electronic excitation at the trap levels. The TL intensity is much higher in the case of the SC phosphor as compared to the SS phosphor. The phosphors exhibited a linear TL response against gamma-ray irradiation for the SC method synthesized phosphor. The TLAnaI program was used to analyze the glow curves. In addition to this, the trapping parameters of all the samples were also calculated using Chen's peak shape method and TLAnaI Program. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:499 / 506
页数:8
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