Sublimation growth of titanium nitride crystals

被引：11

作者：

Du, Li ^{[1
]}

Edgar, J. H. ^{[1
]}

Kenik, Edward A. ^{[2
]}

Meyer, Harry, III ^{[2
]}

机构：

[1] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA

[2] Oak Ridge Natl Lab, High Temp Mat Lab, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 01期

关键词：

TRANSPORT; CHEMISTRY; FILMS; TIN;

D O I：

10.1007/s10854-009-9873-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The sublimation-recondensation growth of titanium nitride crystals with N/Ti ratio of 0.99 on tungsten substrates is reported. The growth rate dependence on temperature and pressure was determined, and the calculated activation energy was 775.8 +/- A 29.8 kJ/mol. The lateral and vertical growth rates changed with the time of growth and the fraction of the tungsten substrate surface covered. The orientation relationship of TiN (001) || W (001) with TiN [100] || W [110], a 45A degrees angle between TiN [100] and W [100], occurs not only for TiN crystals deposited on (001) textured tungsten but also for TiN crystals deposited on randomly orientated tungsten. This study demonstrates that this preferred orientational relationship minimizes the lattice mismatch between the TiN and tungsten.

引用

页码：78 / 87

页数：10

共 21 条

[1] Status of SiC bulk growth processes [J].

Chaussende, D. ;

Wellmann, P. J. ;

Pons, M. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6150-6158

[2] Nitride light-emitting diodes grown on Si (111) using a TiN template [J].

Chen, NC ;

Lien, WC ;

Shih, CF ;

Chang, PH ;

Wang, TW ;

Wu, MC .

APPLIED PHYSICS LETTERS, 2006, 88 (19)

[3]

Edgar JamesH., 1994, PROPERTIES GROUP 3 N, P26

[4]

*EL SPAC PROD INT, MAT SAF DAT SHEET

[5] Similarities and differences in sublimation growth of SiC and AlN [J].

Epelbaum, B. M. ;

Bickermann, M. ;

Nagata, S. ;

Heimann, P. ;

Filip, O. ;

Winnacker, A. .

JOURNAL OF CRYSTAL GROWTH, 2007, 305 (02) :317-325

[6] NUMERICAL MODELING OF DIFFUSIVE PHYSICAL VAPOR TRANSPORT IN CYLINDRICAL AMPOULES [J].

GREENWELL, DW ;

MARKHAM, BL ;

ROSENBERGER, F .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) :413-425

[7] Crystal growth and properties of scandium nitride [J].

Gu, Z ;

Edgar, JH ;

Pomeroy, J ;

Kuball, M ;

Coffey, DW .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2004, 15 (08) :555-559

[8] Hydrazide sol-gel synthesis of nanostructured titanium nitride: precursor chemistry and phase evolution [J].

Kim, IS ;

Kumta, PN .

JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (08) :2028-2035

[9]

MERCURIO L, 2007, MAT RES SOC S P

[10] Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers [J].

Moram, M. A. ;

Kappers, M. J. ;

Zhang, Y. ;

Barber, Z. H. ;

Humphreys, C. J. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :1064-1066

← 1 2 3 →