Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories

被引:108
作者
Nagareddy, V. Karthik [1 ]
Barnes, Matthew D. [1 ]
Zipol, Federico [2 ]
Lai, Khue T. [1 ]
Alexeev, Arseny M. [1 ]
Craciun, Monica Felicia [1 ]
Wright, C. David [1 ]
机构
[1] Univ Exeter, Coll Engn Math & Phys Sci, Ctr Graphene Sci, Harrison Bldg,North Pk Rd, Exeter EX4 4QF, Devon, England
[2] IBM Res Zurich, Saumerstrasse 4, CH-8803 Ruuschlikon, Switzerland
基金
英国工程与自然科学研究理事会;
关键词
graphene oxide; titanium oxide; resistive switching; nonvolatile memory; multilevel memory; flexible memory; SWITCHING MECHANISM; MEMRISTIVE DEVICES; ULTRATHIN FILMS; THIN-FILMS; CARBON; TRANSPARENT; DEPOSITION; MEMBRANES; SINGLE; WATER;
D O I
10.1021/acsnano.6b08668
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graphene oxide (GO) resistive memories offer the promise of low-cost environmentally sustainable fabrication, high mechanical flexibility and high optical transparency, making them ideally suited to future flexible and transparent electronics applications. However, the dimensional and temporal scalability of GO memories, i.e., how small they can be made and how fast they can be switched, is an area that has received scant attention. Moreover, a plethora of GO resistive switching characteristics and mechanisms has been reported in the literature, sometimes leading to a confusing and conflicting picture. Consequently, the potential for graphene oxide to deliver high-performance memories operating on nanometer length and nanosecond time scales is currently unknown. Here we address such shortcomings, presenting not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrate that our approach provides easily accessible multilevel (4-level, 2-bit per cell) storage capabilities along with excellent endurance and retention performance all on both rigid and flexible substrates. Via comprehensive experimental characterizations backed-up by detailed atomistic simulations, we also show that the resistive switching mechanism in our Pt/GO/Ti/Pt devices is driven by redox reactions in the interfacial region between the top (Ti) electrode and the GO layer.
引用
收藏
页码:3010 / 3021
页数:12
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