Microstructure of epitaxial Mg3N2 thin films grown by MBE

被引：9

作者：

John, P. ^{[1
]}

Vennegues, P. ^{[1
]}

Rotella, H. ^{[1
]}

Deparis, C. ^{[1
]}

Lichtensteiger, C. ^{[2
]}

Zuniga-Perez, J. ^{[1
]}

机构：

[1] UCA, CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France

[2] Univ Geneva, DQMP, 24 Quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2021年 / 129卷 / 09期

关键词：

Thin films - Magnesium compounds - Microstructure - Nitrogen compounds - High resolution transmission electron microscopy;

D O I：

10.1063/5.0041903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth of Mg3N2 thin films by molecular beam epitaxy has been recently achieved. This work presents the structural properties of the films, including grain sizes and lattice rotations, as assessed by x-ray diffraction and transmission electron microscopy. The films' microstructure consists of well-aligned columnar grains 10nm in diameter that nucleate at the film/substrate interface and display a significant column twist, in the order of 2.5 degrees. As growth proceeds, tilted and twisted mosaic blocks overgrow these columns, as observed in many other epitaxial semiconductors. Yet, the rocking curves on symmetric reflections display extremely narrow peaks (similar to 50arc sec), revealing a long-range spatial correlation between structural defects that should not be mistakenly considered a proof of high crystalline quality.

引用

页数：10