Growth of nitrogen-doped ZnO films by MOVPE using diisopropylzinc and tertiary-butanol

被引：25
作者：
Kumar, O. Senthil
Watanabe, Eisuke
Nakai, Ryuichi
Nishimoto, Naoki
Fujita, Yasuhisa
机构：
[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Matsue, Shimane 6908504, Japan
[2] Shimane Univ, Res Project Promot Inst, Matsue, Shimane 6908504, Japan
[3] Japan Sci & Technol Agcy, Higashihiroshima 7390046, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷
关键词：
characterization; nitrogen doping; metalorganic vapor-phase epitaxy; zinc oxide; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2006.10.066
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Nitrogen-doped ZnO films have been grown by metalorganic vapor-phase epitaxy using diisopropylzinc, tertiary-butanol in the growth temperature range of 300-450 degrees C. Tertiary- butylamine was used as a nitrogen-dopant source. The nitrogen incorporation and N-H vibrational mode were observed by Raman spectroscopy. The electric properties of the as-grown samples showed n-type with carrier concentration of the order of 10(18) cm(-3). The N-H vibrational mode was eliminated and high electron concentration was decreased to the order of 10(15) cm(-3) by post-annealing at 500 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
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收藏
页码：491 / 494
页数：4
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