A 360° BST phase shifter with moderate bias voltage at 30 GHz

被引:44
|
作者
Velu, Gabriel [1 ]
Blary, Karine
Burgnies, Ludovic
Marteau, Aurelien
Houzet, Gregory
Lippens, Didier
Carru, Jean-Claude
机构
[1] Univ Littoral Cote dOpale, Lab Mat & Components Elect, F-62228 Calais, France
[2] Univ Lille 1, DOME, Grp Quantom Opto & Micro Elect Devices, Dept High Frequency & Semicond,Inst Elect Microel, F-59652 Villeneuve Dascq, France
[3] Univ Sci & Technol Lille, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France
关键词
analog phase shifters; dielectric characterization; ferroelectric thin films; interdigitated capacitors; tunability;
D O I
10.1109/TMTT.2006.889319
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Paraelectric BaSrTiO3 films deposited by sol-gel have been investigated from 1 kHz to 40 GHz using coplanar waveguides, resonators, and inter-digitated capacitances. At room temperature and without bias, the dielectric constant epsilon(r) is around 300 and the loss tangent is 5 x 10(-2). Tunability is 40% for a 40-V bias voltage. Analog phase-shifter circuits were subsequently fabricated in order to obtain a 360 degrees phase shift in the K a-band with a moderate bias voltage. The lowest bias value was 17 V at 40 GHz, whereas 40 V were necessary at 30 GHz. For the latter condition, the insertion loss was -6 dB. The best figure-of-merit of the phase shifters with a loading factor of 1.4 was 27 degrees/dB. These results show an improvement in terms of voltage-controlled tunability.
引用
收藏
页码:438 / 444
页数:7
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