On the relation between defect density and dopant concentration in amorphous silicon films

被引：10

作者：

Caputo, D ^{[1
]}

de Cesare, G ^{[1
]}

Irrera, F ^{[1
]}

Nascetti, A ^{[1
]}

Palma, F ^{[1
]}

机构：

[1] Univ Rome La Sapienza, Dept Elect Engn, I-00184 Rome, Italy

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00846-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work we present a study of the relation between the concentration of dopant gas used in the deposition of amorphous silicon films and the active dopant concentration in the material. Fitting of experimental dark and light conductivity data have been performed by a numerical model to evaluate the ratio between dangling bond density and phosphine concentration. Simulation results show that this ratio is constant for dopant concentration up to 5 x 10(18) and increases to 1 for larger dopant concentration. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：565 / 568

页数：4

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