Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films

被引：9

作者：

Shaibo, Jamal ^{[1
]}

Yang, Rui ^{[1
]}

Wang, Zhe ^{[1
]}

Huang, He-Ming ^{[1
]}

Xiong, Jue ^{[1
]}

Guo, Xin ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, Lab Solid State Ion, Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2019年 / 21卷 / 17期

基金：

中国国家自然科学基金;

关键词：

ANISOTROPIC TRANSPORT-PROPERTIES; ROOM-TEMPERATURE; FERROMAGNETISM; MULTIFERROICS; PROSPECTS; IMPACT;

D O I：

10.1039/c9cp00596j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The low operating temperature and volatile characteristics of the magnetization change are the main obstacles for the practical applications of spintronic and magnetic memories. In this work, both the resistive switching and magnetization switching are realized in Pt/LaBaCo2O5+delta (LBCO)/Nb-doped SrTiO3 (Nb-STO) devices at room temperature through an electric field. Unlike the traditional approach of an external stress inducing a volatile magnetization change, the magnetization in the Pt/LBCO/Nb-STO device is modulated by an electrical field, along with the resistive switching. The resistive and magnetization switching can be attributed to the variation of the depletion layer width at the LBCO/Nb-STO interface via oxygen vacancy migration and the increase/decrease of the Co-O-Co bond length, respectively. The present device with the synchronous manipulation of both resistance and magnetization at room temperature can be applied in nonvolatile resistive memories and novel magnetic multifunctional devices.

引用

页码：8843 / 8848

页数：6

共 66 条

[1] Oxygen Vacancy Dynamics at Room Temperature in Oxide Heterostructures [J].

Bao, Shanyong ;

Ma, Jing ;

Yang, Teng ;

Chen, Mingfeng ;

Chen, Jiahui ;

Pang, Shengli ;

Nan, Ce-Wen ;

Chen, Chonglin .

ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (05) :5107-5113

[2] Ultrafast Atomic Layer-by-Layer Oxygen Vacancy-Exchange Diffusion in Double-Perovskite LnBaCo2O5.5+δ Thin Films [J].

Bao, Shanyong ;

Ma, Chunrui ;

Chen, Garry ;

Xu, Xing ;

Enriquez, Erik ;

Chen, Chonglin ;

Zhang, Yamei ;

Bettis, Jerry L., Jr. ;

Whangbo, Myung-Hwan ;

Dong, Chuang ;

Zhang, Qingyu .

SCIENTIFIC REPORTS, 2014, 4

[3] A Versatile Light-Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3 [J].

Bera, Ashok ;

Peng, Haiyang ;

Lourembam, James ;

Shen, Youde ;

Sun, Xiao Wei ;

Wu, T. .

ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (39) :4977-4984

[4] Multiferroics:: Towards a magnetoelectric memory [J].

Bibes, Manuel ;

Barthelemy, Agnes .

NATURE MATERIALS, 2008, 7 (06) :425-426

[5] Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO [J].

Chen, Guang ;

Song, Cheng ;

Chen, Chao ;

Gao, Shuang ;

Zeng, Fei ;

Pan, Feng .

ADVANCED MATERIALS, 2012, 24 (26) :3515-3520

[6] Electrical conductivity relaxation studies of an epitaxial La0.5Sr0.5CoO3-δ thin film [J].

Chen, X ;

Wang, S ;

Yang, YL ;

Smith, L ;

Wu, NJ ;

Kim, BI ;

Perry, SS ;

Jacobson, AJ ;

Ignatiev, A .

SOLID STATE IONICS, 2002, 146 (3-4) :405-413

[7] Magnetization vector manipulation by electric fields [J].

Chiba, D. ;

Sawicki, M. ;

Nishitani, Y. ;

Nakatani, Y. ;

Matsukura, F. ;

Ohno, H. .

NATURE, 2008, 455 (7212) :515-518

[8] A ten-year perspective on dilute magnetic semiconductors and oxides [J].

Dietl, Tomasz .

NATURE MATERIALS, 2010, 9 (12) :965-974

[9] Multiferroic and magnetoelectric materials [J].

Eerenstein, W. ;

Mathur, N. D. ;

Scott, J. F. .

NATURE, 2006, 442 (7104) :759-765

[10] Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions [J].

Fujii, T. ;

Kawasaki, M. ;

Sawa, A. ;

Kawazoe, Y. ;

Akoh, H. ;

Tokura, Y. .

PHYSICAL REVIEW B, 2007, 75 (16)

← 1 2 3 4 5 6 7 →