Selective-area growth of ZnSe on patterned GaAs(001) substrates by molecular beam epitaxy

被引：6

作者：

Yamazaki, Y ^{[1
]}

Chang, JH ^{[1
]}

Cho, MW ^{[1
]}

Sekiguchi, T ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

selective-area growth; ZnSe; molecular beam epitaxy; poly-crystal;

D O I：

10.1016/S0022-0248(00)00082-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The selective-area growth of ZnSe is performed by molecular beam epitaxy on oxide-masked GaAs(0 0 1) substrates. Single-crystalline layers are obtained on a bare surface of the GaAs substrate, while poly-crystalline layers are deposited on an SiO2-covered region. The growth rate of a single-crystalline layer is faster than that of a poly-crystalline layer at least up to a substrate temperature of 340 degrees C. The difference in growth rate increases with increasing the substrate temperature. The low-temperature photoluminescence of a single-crystalline layer shows dominant excitonic emission. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：202 / 206

页数：5