Nonlinear Validation of Arbitrary Load X-parameter and Measurement-Based Device Models

被引：0

作者：

Gunyan, Daniel ^{[1
]}

Horn, Jason ^{[1
]}

Xu, Jianjun ^{[1
]}

Root, David E. ^{[1
]}

机构：

[1] Agilent Technol, Santa Rosa, CA USA

来源：

2009 73RD ARFTG MICROWAVE MEASUREMENT CONFERENCE | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

X-parameters are the mathematically correct supersets of S-parameters valid for nonlinear (and linear) components under large-signal (and small-signal) conditions. This paper compares a PHD model generated from arbitrary load-dependent measured X-parameters and a measurementbased non-quasi-static device model and validates them against tuned-load measurements. CW, IMD, and ACPR swept-power measurements are compared. The models agree on the simulated device behavior and compare well to validation measurements.

引用

页码：58 / 61

页数：4

共 6 条

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[2]

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Root, DE ;

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[4]

ROOT DE, 1991, 21 EUR MICR C P STUT, P927

[5]

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[6]

XU J, 2006, MICR S 2006 IEEE MTT

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