Optical transition dynamics in ZnO/ZnMgO multiple quantum well structures with different well widths grown on ZnO substrates

被引：33

作者：

Li, Song-Mei ^{[1
,2
]}

Kwon, Bong-Joon ^{[1
,2
]}

Kwack, Ho-Sang ^{[1
,2
]}

Jin, Li-Hua ^{[1
,2
]}

Cho, Yong-Hoon ^{[1
,2
]}

Park, Young-Sin ^{[3
]}

Han, Myung-Soo ^{[4
]}

Park, Young-Sik ^{[4
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Grad Sch Nanosci & Technol WCU, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, KI NanoCentury, Taejon 305701, South Korea

[3] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[4] Korea Photon Technol Inst, Microopt Team, Kwangju 500460, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期

关键词：

electron-hole recombination; II-VI semiconductors; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; X-ray diffraction; zinc compounds; MULTIQUANTUM WELLS; TEMPERATURE;

D O I：

10.1063/1.3284959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photogenerated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider well width.

引用

页数：4

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