Diffusion-transmission interface condition for electron and phonon transport

被引：36

作者：

Chen, G ^{[1
]}

机构：

[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 06期

关键词：

D O I：

10.1063/1.1543239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter introduces a diffusion-transmission condition for dealing with the transport of electrons, phonons, and photons at interfaces, and boundaries. The condition can be used consistently with drift-diffusion-type transport equations and simplifies interface-dominated transport problems. This interface condition is used to establish a formulation for thermionic emission that is applicable to arbitrary barrier heights. (C) 2003 American Institute of Physics.

引用

页码：991 / 993

页数：3

共 13 条

[1]

Chen G, 2001, MICROSCALE THERM ENG, V5, P71

[2]

Deissler R. G, 1964, ASME, V86, P240

[3]

Hess K., 2000, Advanced Theory of Semiconductor Devices

[4] Conductance viewed as transmission [J].