Diffusion-transmission interface condition for electron and phonon transport

被引:36
作者
Chen, G [1 ]
机构
[1] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.1543239
中图分类号
O59 [应用物理学];
学科分类号
摘要
This letter introduces a diffusion-transmission condition for dealing with the transport of electrons, phonons, and photons at interfaces, and boundaries. The condition can be used consistently with drift-diffusion-type transport equations and simplifies interface-dominated transport problems. This interface condition is used to establish a formulation for thermionic emission that is applicable to arbitrary barrier heights. (C) 2003 American Institute of Physics.
引用
收藏
页码:991 / 993
页数:3
相关论文
共 13 条
[1]  
Chen G, 2001, MICROSCALE THERM ENG, V5, P71
[2]  
Deissler R. G, 1964, ASME, V86, P240
[3]  
Hess K., 2000, Advanced Theory of Semiconductor Devices
[4]   Conductance viewed as transmission [J].
Imry, Y ;
Landauer, R .
REVIEWS OF MODERN PHYSICS, 1999, 71 (02) :S306-S312
[5]   THE TRANSPORT OF HEAT BETWEEN DISSIMILAR SOLIDS AT LOW TEMPERATURES [J].
LITTLE, WA .
CANADIAN JOURNAL OF PHYSICS, 1959, 37 (03) :334-349
[6]  
Lundstrom M., 2000, FUNDAMENTALS CARRIER
[7]  
SCHROEDER D, 1972, J APPL PHYS, V72, P964
[8]  
Siegel R, 1992, Thermal radiation heat transfer, V3rd
[9]   THERMAL CONTACT RESISTANCE BETWEEN INSULATORS [J].
SIMONS, S .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (22) :4048-4052
[10]   A DETAILED INVESTIGATION OF HETEROJUNCTION TRANSPORT USING A RIGOROUS SOLUTION TO THE BOLTZMANN-EQUATION [J].
STETTLER, MA ;
LUNDSTROM, MS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (04) :592-600