Electronic properties of si and ge atoms doped in clusters:: InnSim and InnGem

Electronic properties of silicon and germanium atom doped indium clusters, InnSim and InnGem, were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for InnSi1 and InnGe1 exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In-n clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the 1d shell formed by monovalent In atoms.