Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy

被引：3
作者：
Yamaguchi, S
Iwamura, Y
Watanabe, Y
Kosaki, M
Yukawa, Y
Nitta, S
Kamiyama, S
Amano, H
Akasaki, I
机构：
[1] Kanagawa Univ, Dept Elect Elect & Informat Engn, Kanagawa Ku, Yokohama, Kanagawa 2218686, Japan
[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[4] Meijo Univ, HRC, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷
关键词：
doping; p-type doping; metalorganic vapor phase epitaxy; GaN; nitrides;
D O I：
10.1016/S0022-0248(02)01841-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
P-GaN layer was grown by metalorganic vapor phase epitaxy at 1000degreesC with an LT-deposited AlN buffer layer. Bis(cyclopentadienyl) magnesium was used as a dopant and trimethyindium (TMIn) was simultaneously Supplied. N-2 carrier gas was used during GaN growth. The contact of as-grown GaN:Mg sample was Ohmic only for III-doped GaN. Others showed Schottky behavior. The hole concentration was increased up to 5.0 x 10(17) cm(-3) at room temperature for In-doped samples. Moreover. with increasing TMIn flow rate. the biaxial strain in as-grown p-GaN was reduced and accordingly the hole concentration was increased. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：503 / 506
页数：4
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