Magnetoresistance and magnetic properties of epitaxial magnetite thin films

被引：219
作者：
Gong, GQ
Gupta, A
Xiao, G
Qian, W
Dravid, VP
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 09期
关键词：
D O I：
10.1103/PhysRevB.56.5096
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetotransport and magnetic properties of epitaxial Fe3O4 thin films grown on (001)-oriented MgO substrates by pulsed-laser deposition have been investigated. The magnetoresistance (MR) exhibits a peak around the Verwey transition (T-nu) as has also been reported previously for single crystals. Additionally, we have observed that the MR increases monotonically below 100 K with decreasing temperature. MR values as high as 32% have been observed for a 6600-Angstrom-thick film at 60 K under a 4-T field. The enhanced low-temperature MR is attributed to a magnetic-field-dependent activation energy for electron hopping transport.
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收藏
页码：5096 / 5099
页数：4
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