First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate

被引：12
|
作者：
Zubair, A. [1 ]
Perozek, J. [1 ]
Niroula, J. [1 ]
Aktas, O. [2 ]
Odnoblyudov, V [2 ]
Palacios, T. [1 ]
机构：
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Qromis Inc, Santa Clara, CA 95051 USA
来源：
2020 DEVICE RESEARCH CONFERENCE (DRC) | 2020年
关键词：
D O I：
10.1109/drc50226.2020.9135176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Vertical GaN Power Devices
    Li, Wenwen
    Ji, Dong
    2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
  • [22] Investigation on conductivity at the GaN/AlN/SiC substrate interface for vertical nitride power FETs
    Wakamiya, Y.
    Hasegawa, F.
    Kawanishi, H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1505 - 1507
  • [23] Demonstration of fully-vertical GaN-on-Si power MOSFETs using regrowth technique
    Biswas, D.
    Torii, N.
    Yamamoto, K.
    Egawa, T.
    ELECTRONICS LETTERS, 2019, 55 (07) : 404 - 405
  • [24] GaN FinFETs and trigate devices for power and RF applications: review and perspective
    Zhang, Yuhao
    Zubair, Ahmad
    Liu, Zhihong
    Xiao, Ming
    Perozek, Joshua
    Ma, Yunwei
    Palacios, Tomas
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (05)
  • [25] High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
    Zhang, Kai
    Kong, Yuechan
    Zhu, Guangrun
    Zhou, Jianjun
    Yu, Xinxin
    Kong, Cen
    Li, Zhonghui
    Chen, Tangsheng
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 615 - 618
  • [26] First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate
    Hoel, V.
    Defrance, N.
    De Jaeger, J. C.
    Gerard, H.
    Gaquiere, C.
    Lahreche, H.
    Langer, R.
    Wilk, A.
    Lijadi, M.
    Delage, S.
    ELECTRONICS LETTERS, 2008, 44 (03) : 238 - 239
  • [27] High brightness GaN LEDs with engineered sapphire substrate
    Arokiaraj, J.
    Maung, Bryan
    Lang, Teo Siew
    Choy, Chum Chan
    Chua, S. J.
    2007 9TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2007, : 343 - 346
  • [28] Demonstration of a Fully-Vertical GaN MOSFET on Si
    Biswas, Debaleen
    Torii, Naoki
    Yamamoto, Keiji
    Egawa, Takashi
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [29] First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor
    Mhedhbi, S.
    Lesecq, M.
    Altuntas, P.
    Defrance, N.
    Okada, E.
    Cordier, Y.
    Damilano, B.
    Tabares-Jimenez, G.
    Ebongue, A.
    Hoel, V.
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (05) : 553 - 555
  • [30] First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz
    Medjdoub, F.
    Zegaoui, M.
    Grimbert, B.
    Ducatteau, D.
    Rolland, N.
    Rolland, P. A.
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (08) : 1168 - 1170
12345