First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate

被引：12
|
作者：
Zubair, A. [1 ]
Perozek, J. [1 ]
Niroula, J. [1 ]
Aktas, O. [2 ]
Odnoblyudov, V [2 ]
Palacios, T. [1 ]
机构：
[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] Qromis Inc, Santa Clara, CA 95051 USA
来源：
2020 DEVICE RESEARCH CONFERENCE (DRC) | 2020年
关键词：
D O I：
10.1109/drc50226.2020.9135176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：2
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