Understanding the chemical vapor deposition of diamond: recent progress

被引:199
作者
Butler, J. E. [1 ]
Mankelevich, Y. A. [2 ]
Cheesman, A. [3 ]
Ma, Jie [3 ]
Ashfold, M. N. R. [3 ]
机构
[1] USN, Res Lab, Div Chem, Washington, DC 20375 USA
[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia
[3] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England
基金
英国工程与自然科学研究理事会;
关键词
FILAMENT ACTIVATED CH4/H-2; ATOMIC-SCALE SIMULATIONS; MODERATE PRESSURE H-2; HOT-FILAMENT; CVD-DIAMOND; MICROWAVE-DISCHARGE; METHANE-HYDROGEN; GROWTH-RATES; FILM GROWTH; 100; SURFACE;
D O I
10.1088/0953-8984/21/36/364201
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this paper we review and provide an overview to the understanding of the chemical vapor deposition (CVD) of diamond materials with a particular focus on the commonly used microwave plasma-activated chemical vapor deposition (MPCVD). The major topics covered are experimental measurements in situ to diamond CVD reactors, and MPCVD in particular, coupled with models of the gas phase chemical and plasma kinetics to provide insight into the distribution of critical chemical species throughout the reactor, followed by a discussion of the surface chemical process involved in diamond growth.
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页数:20
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