Ionic Liquid versus SiO2 Gated a-IGZO Thin Film Transistors: A Direct Comparison

被引：22

作者：

Pudasaini, Pushpa Raj ^{[1
]}

Noh, Joo Hyon ^{[1
]}

Wong, Anthony ^{[1
,2
]}

Haglund, Amanda V. ^{[1
,2
]}

Dai, Sheng ^{[3
]}

Ward, Thomas Zac ^{[2
]}

Mandrus, David ^{[1
,2
]}

Rack, Philip D. ^{[1
,4
]}

机构：

[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[3] Oak Ridge Natl Lab, Div Chem Sci, Oak Ridge, TN 37831 USA

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 09期

关键词：

HIGH-MOBILITY; TEMPERATURE; SUPPRESSION; TRANSPORT;

D O I：

10.1149/2.0141509jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio similar to 10(5), a promising field effect mobility of 14.20 cm(2)V(-1)s(-1), and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >10(8), a field effect mobility of 13.89 cm(2)V(-1)s(-1) and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be "frozen-in" by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZOTFT "ON" and "OFF" state, respectively, which could lead to new switching and possibly non-volatile memory applications. (C) 2015 The Electrochemical Society. All rights reserved.

引用

页码：Q105 / Q109

页数：5

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