DEVELOPMENT OF SUB-10 μM PITCH HGCDTE INFRARED DETECTORS

被引：2

作者：

Abergel, J. ^{[1
]}

Rochette, F. ^{[1
]}

Gout, S. ^{[1
]}

Baudry, X. ^{[1
]}

Grangier, C. ^{[1
]}

Even, A. ^{[1
]}

Santailler, J. L. ^{[1
]}

Giotta, D. ^{[1
]}

Obrecht, R. ^{[1
]}

Pellerin, T. ^{[1
]}

Bonnefond, L. ^{[1
]}

Rothman, J. ^{[1
]}

Bisotto, S. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XLV | 2019年 / 11002卷

关键词：

HgCdTe; infrared; detector; FPA; small pitch; passivation;

D O I：

10.1117/12.2520030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This LETI/Sofradir/Defir study aims at realizing sub-10 mu m pitch HgCdTe infrared FPAs. To cope with the different diode process issues related to pitch reduction -morphologic realization, short-circuits, FTM optimization- a parametric study was carried out -contact size, passivation properties, doping levels, diode processing conditions-. A wafer-level test campaign was conducted to evaluate the process window. It revealed functional MWIR diodes from 15 mu m to 3 mu m pitch. 7.5 mu m pitch 640x512 and 5 mu m pitch 64x152 FPA were characterized and turned out to be functional.

引用

页数：8

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