High-temperature stability of the mechanical and optical properties of Si-B-C-N films prepared by magnetron sputtering

被引:27
作者
Kalas, J. [1 ]
Vernhes, R. [2 ,3 ]
Hreben, S. [1 ]
Vlcek, J. [1 ]
Klemberg-Sapieha, J. E. [2 ,3 ]
Martinu, L. [2 ,3 ]
机构
[1] Univ W Bohemia, Dept Phys, Plzen 30614, Czech Republic
[2] Ecole Polytech, Grp Rech Phys & Technol Couches Minces GCM, Montreal, PQ H3C 3A7, Canada
[3] Ecole Polytech, Dept Engn Phys, Montreal, PQ H3C 3A7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Si-B-C-N films; Magnetron co-sputtering; Bonding structure; Hardness; Optical properties; Thermal stability; GAS-MIXTURE COMPOSITION; SICBN THIN-FILMS; OXIDATION RESISTANCE; CERAMICS; CARBON; NITRIDE; COATINGS; BEHAVIOR; SURFACE; SYSTEM;
D O I
10.1016/j.tsf.2009.06.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quaternary Si-B-C-N materials are becoming increasingly attractive due to their possible high-temperature and harsh-environment applications. In this work, amorphous Si-B-C-N films with two compositions (Si34B9C4N49 and Si36B13C7N40) and low contamination level (H + O + Ar<4 at.%) were deposited on silicon substrates by reactive dc magnetron co-sputtering using two different targets and gas mixtures. Thermal stability of these films was investigated in terms of composition, bonding structure, as well as mechanical and optical proper-ties after annealing in helium up to a 1300 degrees C substrate limit. Films with a high nitrogen content (Si34B9C4N49, i.e. N/[Si + B + C]similar to 1.0) were found to be stable up to 1300 degrees C. After annealing, the hardness and elastic recovery of those films slightly increased up to 27 GPa and 84%, respectively, and the reduced Young's modulus remained practically constant (similar to 170 GPa). The refractive index and the extinction coefficient at 550 nm were evaluated at 2.0 and 5 x 10(-4), respectively, and the optical band gap was approximately 3.0 eV. In contrast, films with a lower nitrogen content (Si36B13C7N40, i.e. N/[Si + B + C]similar to-0.7) were stable only up to 1200 degrees C. Both Si-B-C-N materials studied here exhibited extremely high oxidation resistance in air up to the 1300 degrees C substrate limit. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:174 / 179
页数:6
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