Highly sensitive thermistors based on high-purity polycrystalline cubic silicon carbide

被引：25

作者：

de Vasconcelos, EA ^{[1
]}

Khan, SA ^{[1
]}

Zhang, WY ^{[1
]}

Uchida, H ^{[1
]}

Katsube, T ^{[1
]}

机构：

[1] Saitama Univ, Dept Informat & Comp Sci, Urawa, Saitama 3388570, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 83卷 / 1-3期

关键词：

silicon carbide; temperature sensors; thermistors; polycrystalline semiconductors;

D O I：

10.1016/S0924-4247(00)00351-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is possible to fabricate highly sensitive thermistors using polycrystalline, intentionally undoped, chemical vapor deposition cubic SiC wafers. Resistance-temperature characteristics described by thermistor equations with thermistor constants around 7000 K from 25 degrees C to 200 degrees C and around 5000 K from 200 degrees C to 400 degrees C are presented (temperature coefficient of resistance at 25 degrees C = -7.9%/K). The influence of the fabrication process on thermistor characteristics as well as conduction mechanisms are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：167 / 171

页数：5

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