Integrated on-chip Ba2Ti9O20 Dielectric Resonator Oscillator in GaAs Technology

被引：1

作者：

Freundorfer, A. P. ^{[1
]}

Bijumon, P. V. ^{[1
]}

Sayer, M. ^{[1
]}

机构：

[1] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada

来源：

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3 | 2009年

基金：

加拿大自然科学与工程研究理事会;

关键词：

Dielectric resonator oscillators; Ceramics; Dielectric films and Dielectric materials;

D O I：

10.1109/MWSYM.2009.5165894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report for the first time a 26 GHz K/Ka-band dielectric resonator oscillator (DRO) in 0.8 mu m GaAs MESFET that had the Ba2Ti9O20 dielectric resonator (DR) grown to the surface of the chip at a temperature of 150 degrees C without destroying the devices of the IC. It was compared to a DRO that had a commercially available DR, Ba(Zn1/3Ta2/3)O-3, epoxied to it. The Ba2Ti9O20 DRO had a measured output power power of 5.68dBm at 25.6 GHz and a phase noise of -114 dBc @ 1MHz.

引用

页码：1105 / +

页数：2

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