A CMOS uncooled heat-balancing infrared imager

被引:10
作者
Liu, CC [1 ]
Mastrangelo, CH [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Integrated Microsyst, Ann Arbor, MI 48109 USA
关键词
thermal imager;
D O I
10.1109/4.839912
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report the fabrication, design, and testing of an uncooled 8 x 8 infrared imager based on an active pixel heat balancing technique. The imager is fabricated using a commercial CMOS process plus a simple electrochemical etch stop releasing step. The basic active pixel detector structure consists of a simple cascode CMOS amplifier in which the PMOS devices are built inside a thermally isolated floating n-well, The intrinsic coupling of the cascode currents with the self-heating of the well forms an electrothermal feedback loop that tends to maintain the well temperature constant. By employing the heat balance between incoming infrared radiation and the PMOS device power dissipation, the responsivity of the detector is controlled by the cascode biasing current, Measurements show responsivities between 0.3-1.2 x 10(6) V/W when the infrared source is chopped at 20 Hz and a detectivity D* = 3 x 10(7) cm root HzW(-1) at 30 Hz, Noise measurements suggest that a D* of 10(8) cm root HzW(-1) is achievable in this design.
引用
收藏
页码:527 / 535
页数:9
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