Semiconductor x-ray detectors are widely used in experiments at synchrotron facilities. The performance of these detectors depends heavily on the semiconductor material properties. Improvements in crystal growth and device processing are key to developing "high-Z" (high atomic number) semiconductors for hard x-ray detection. Germanium is the most mature high-Z semiconductor and is widely used in x-ray detectors, but it has the drawback of needing to be cooled during operation, often to cryogenic temperatures. Compound semiconductors with wide bandgaps can be used at room temperature, but crystal defects can degrade their performance. Gallium arsenide currently shows poorer energy resolution, but its comparative robustness and stability over time make it a strong option for imaging detectors. Cadmium telluride and cadmium zinc telluride both provide higher detection efficiencies at extreme x-ray energies as well as good energy resolution; the main challenge with these materials is maintaining consistent behavior under a high x-ray flux.
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Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USACornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
Philipp, H. T.
Tate, M. W.
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Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USACornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
Tate, M. W.
Shanks, K. S.
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Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USACornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
Shanks, K. S.
Purohit, P.
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Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USACornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
Purohit, P.
Gruner, S. M.
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Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
Cornell Univ, CHESS, Ithaca, NY 14853 USA
Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USACornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14853 USA
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Univ Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Detect Technol Plc, Ahventie 4 B, FI-02170 Espoo, FinlandUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Winkler, Alexander
Naaranoja, Tiina
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Univ Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, FinlandUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Naaranoja, Tiina
Gadda, Akiko
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Univ Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, FinlandUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Gadda, Akiko
Ott, Jennifer
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Univ Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, FinlandUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Ott, Jennifer
Luukka, Panja
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Univ Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, FinlandUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Luukka, Panja
Karadzhinova-Ferrer, Aneliya
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Rudjer Boskovic Inst, Bijenicka Cesta 54, Zagreb 10000, CroatiaUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Karadzhinova-Ferrer, Aneliya
Kalliokoski, Matti
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Rudjer Boskovic Inst, Bijenicka Cesta 54, Zagreb 10000, CroatiaUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland
Kalliokoski, Matti
Harkonen, Jaakko
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Rudjer Boskovic Inst, Bijenicka Cesta 54, Zagreb 10000, CroatiaUniv Helsinki, Helsinki Inst Phys, Gustaf Hallstromin Katu 2,POB 64, FI-00014 Helsinki, Finland