Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

被引：9

作者：

Cho, Y. S. ^{[1
]}

Hardtdegen, H. ^{[1
]}

Kaluza, N. ^{[1
]}

von der Ahe, M. ^{[1
]}

Breuer, U. ^{[2
]}

Bochem, H. -P. ^{[1
]}

Ruterana, P. ^{[3
]}

Schmalbuch, K. ^{[4
,5
]}

Wenzel, D. ^{[4
,5
]}

Schaepers, Th. ^{[1
]}

Beschoten, B. ^{[4
,5
]}

Gruetzmacher, D. ^{[1
]}

Lueth, H. ^{[1
]}

机构：

[1] Res Ctr Julich, VISel, JARA, IBN 1, D-52425 Julich, Germany

[2] Res Ctr Julich, Cent Div Analyt Chem ZCH, D-52425 Julich, Germany

[3] ENISCAEN CEA UCBN, CNRS, CIMAP, UMR 6252, F-14050 Caen, France

[4] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

[5] Rhein Westfal TH Aachen, VISel, D-52056 Aachen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 312卷 / 01期

关键词：

Crystallites; Metalorganic vapor phase epitaxy; Nitrides; Magnetic materials; Semiconducting materials; MOLECULAR-BEAM-EPITAXY; CR-DOPED GAN; MAGNETIC-PROPERTIES; CARRIER GAS; FERROMAGNETISM; MECHANISM; FILMS;

D O I：

10.1016/j.jcrysgro.2009.09.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of the growth temperature in metal organic vapor-phase epitaxy (MOVPE) on intentional Cr incorporation during GaN growth is studied in the range 900-1125 degrees C. The structural properties are investigated and compared to those obtained from undoped layers deposited at the same growth conditions and using the same growth procedure: Whereas, the best surface morphology and the best crystal quality are found at 1125 degrees C for undoped GaN layers, the best structural and morphological properties are obtained for the Cr-doped GaN (GaN:Cr) layers grown at 950 degrees C. GaN:Cr layers deposited at this temperature additionally exhibit the highest Cr concentration in the series as well as a Cr accumulation in the beginning stage of GaN:Cr growth. The accumulation may be responsible for the changed growth mode and the improved structural characteristics as well as for the observed V-shaped defects usually associated with strain relaxation. Thermo-remanent magnetization and a hysteresis loop were observed even above room temperature. The magnetic properties correlate to the structural properties of GaN:Cr layers. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1 / 9

页数：9

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