ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide

被引：97

作者：

Godlewski, M. ^{[1
,2
]}

Guziewicz, E. ^{[1
]}

Luka, G. ^{[1
]}

Krajewski, T. ^{[1
]}

Lukasiewicz, M. ^{[1
,2
]}

Wachnicki, L. ^{[1
,2
]}

Wachnicka, A. ^{[1
,2
]}

Kopalko, K. ^{[1
]}

Sarem, A. ^{[3
]}

Dalati, B. ^{[3
]}

机构：

[1] Polish Acad Sci, Inst Phys, Warsaw, Poland

[2] Cardinal Stefan Wyszynski Univ, Coll Sci, Dept Math & Nat Sci, Warsaw, Poland

[3] Tishreen Univ, Fac Sci, Dept Phys, Latakia, Syria

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 04期

关键词：

Atomic Layer Deposition; Photovoltaics; ZnO; Transparent conductive oxides; CdTe; Organic materials; THIN-FILMS; SOLAR-CELLS;

D O I：

10.1016/j.tsf.2009.04.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate possibility of a control (by selection of zinc precursors and variation of a growth temperature) of electrical properties of ZnO films grown by Atomic Layer Deposition (ALD). ZnO films grown by ALD are used in test photovoltaic devices (solar cells) as transparent conductive oxides for upper, transparent layer in inorganic and organic solar cells. and as n-type partners of p-type CdTe. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1145 / 1148

页数：4

共 21 条

[1]

[Anonymous], 2007, 2007 SURV EN RES

[2] PHOTO-VOLTAIC PROPERTIES OF ZNO-CDTE HETEROJUNCTIONS PREPARED BY SPRAY PYROLYSIS [J].

ARANOVICH, JA ;

GOLMAYO, D ;

FAHRENBRUCH, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4260-4268

[3] Metal-like conductivity in transparent Al:ZnO films [J].

Bamiduro, O. ;

Mustafa, H. ;

Mundle, R. ;

Konda, R. B. ;

Pradhan, A. K. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[4] Nanowire-based dye-sensitized solar cells [J].

Baxter, JB ;

Aydil, ES .

APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3

[5] Polycrystalline CdTe thin films for photovoltaic applications [J].

Bosio, Alessio ;

Romeo, Nicola ;

Mazzamuto, Samantha ;

Canevari, Vittorio .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2006, 52 (04) :247-279

[6] Carrier transport in polycrystalline ITO and ZnO:Al II:: The influence of grain barriers and boundaries [J].

Ellmer, Klaus ;

Mientus, Rainald .

THIN SOLID FILMS, 2008, 516 (17) :5829-5835

[7] Vertically stacked non-volatile memory devices - material considerations [J].

Godlewski, M. ;

Guziewicz, E. ;

Szade, J. ;

Wojcik-Glodowska, A. ;

Wachnicki, L. ;

Krajewski, T. ;

Kopalko, K. ;

Jakiela, R. ;

Yatsunenko, S. ;

Przezdziecka, E. ;

Kruszewski, P. ;

Huby, N. ;

Tallarida, G. ;

Ferrari, S. .

MICROELECTRONIC ENGINEERING, 2008, 85 (12) :2434-2438

[8] Air-stable all-inorganic nanocrystal solar cells processed from solution [J].

Gur, I ;

Fromer, NA ;

Geier, ML ;

Alivisatos, AP .

SCIENCE, 2005, 310 (5747) :462-465

[9] Extremely low temperature growth of ZnO by atomic layer deposition [J].

Guziewicz, E. ;

Kowalik, I. A. ;

Godlewski, M. ;

Kopalko, K. ;

Osinniy, V. ;

Wojcik, A. ;

Yatsunenko, S. ;

Lusakowska, E. ;

Paszkowicz, W. ;

Guziewicz, M. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)

[10] Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition [J].

Huby, N. ;

Ferrari, S. ;

Guziewicz, E. ;

Godlewski, M. ;

Osinniy, V. .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

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