Enhanced field emission from injector-like ZnO nanostructures with minimized screening effect

被引：54

作者：

Li, C.

Yang, Y.

Sun, X. W. ^{[1
]}

Lei, W.

Zhang, X. B.

Wang, B. P.

Wang, J. X.

Tay, B. K.

Ye, J. D.

Lo, G. Q.

Kwong, D. L.

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] SE Univ, Sch Elect Sci & Engn, Nanjing 210096, Peoples R China

[3] Inst Microelect, Singapore 117685, Singapore

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 13期

关键词：

D O I：

10.1088/0957-4484/18/13/135604

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Injector-like zinc oxide (ZnO) nanostructures have been synthesized on Si substrate by the vapour phase transport method. Samples with different areal densities were obtained by controlling the temperature. The field emission properties of the injector-like ZnO nanostructures showed a clear dependence on the areal density of the nanostructures, which is due to the screening effect. The samples with a needle length of 850 nm and an areal density of 1 x 10(8) cm(-2) showed the lowest field emission turn-on field of 1.85 V mu m(-1) at a current density of 10 mu A cm(-2), and the current density reaches 1 mA cm(-2) at an applied field of 4.7 V mu m(-1).

引用

页数：4