DC characteristics of SiC power Schottky diodes modelling in spice

被引：0

作者：

Zarebski, Janusz ^{[1
]}

Dabrowski, Jacek ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland

来源：

INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS | 2006年 / 36卷 / 03期

关键词：

silicon carbide (SiC); schottky barrier diodes (SBDs); modelling; self-heating; electrothermal macromodel; SPICE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the problem of SPICE modelling of the class of silicon-carbide (SiC) Schottky diodes with thermal effects (self-heating) taken into account is considered. Since April 2001 the SiC Schottky diodes made by Infineon Technologies have been commercially attainable. In the paper the SPICE electrothermal (including self-heating) macromodel of Infineon Technologies SiC Schottky diode is presented and in detail investigated. The considered macromodel has been verified experimentally. The silicon-carbide SDP04S60 rectifier has been tested. The nonisothermal characteristics obtained from measurements and SPICE calculations of SDP04S60 diode are compared. Due to the unacceptably large differences between measurements and calculations, some modifications of the macromodel have been proposed.

引用

页码：123 / 126

页数：4

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