Design of High-Performance CMOS Tunable Active Inductor

被引：0
作者：
Saad, Sehmi [1 ]
Mhiri, Mongia [1 ]
Ben Hammadi, Aymen [1 ]
Besbes, Kamel [1 ,2 ]
机构：
[1] Univ Monastir, LR 13ES12, Microelect & Instrumentat Lab, Monastir, Tunisia
[2] CRMN, Technopark Sousse, Sousse, Tunisia
来源：
PROCEEDINGS OF 2016 11TH INTERNATIONAL DESIGN & TEST SYMPOSIUM (IDT) | 2016年
关键词：
CMOS; Active Inductor; Feedback Resistor; Gyrator-C; Q-factor; ENHANCED DESIGN; POWER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new single-ended tunable active inductor (TAI) based on the use of two simples transconducters is proposed. A feedback resistance is added to improve the quality factor, while the tuning range of the desired inductance value is achieved by using a network of capacitance. The TAI has been implemented in a MS/RF 90 nm CMOS technology and a 1-V supply is used. The simulation results show that an inductance tuning range from 3.55 to 50 nH can be achieved. A high quality factor of 895 is obtained at the frequency 1.82 GHz. The circuit occupies a small active area of 22 x 27.5 mm(2), presents a noise level of less than 4.2nV/v Hz, and consumes a power of 0.5 mW.
引用
收藏
页码：239 / 244
页数：6
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