Design of High-Performance CMOS Tunable Active Inductor

被引：0

作者：

Saad, Sehmi ^{[1
]}

Mhiri, Mongia ^{[1
]}

Ben Hammadi, Aymen ^{[1
]}

Besbes, Kamel ^{[1
,2
]}

机构：

[1] Univ Monastir, LR 13ES12, Microelect & Instrumentat Lab, Monastir, Tunisia

[2] CRMN, Technopark Sousse, Sousse, Tunisia

来源：

PROCEEDINGS OF 2016 11TH INTERNATIONAL DESIGN & TEST SYMPOSIUM (IDT) | 2016年

关键词：

CMOS; Active Inductor; Feedback Resistor; Gyrator-C; Q-factor; ENHANCED DESIGN; POWER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a new single-ended tunable active inductor (TAI) based on the use of two simples transconducters is proposed. A feedback resistance is added to improve the quality factor, while the tuning range of the desired inductance value is achieved by using a network of capacitance. The TAI has been implemented in a MS/RF 90 nm CMOS technology and a 1-V supply is used. The simulation results show that an inductance tuning range from 3.55 to 50 nH can be achieved. A high quality factor of 895 is obtained at the frequency 1.82 GHz. The circuit occupies a small active area of 22 x 27.5 mm(2), presents a noise level of less than 4.2nV/v Hz, and consumes a power of 0.5 mW.

引用

页码：239 / 244

页数：6

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