Temperature versus concentration phase diagram of Mg- and Si-doped CuGeO3

被引：10
|
作者：
Masuda, T
Ina, K
Hadama, K
Tsukada, I
Uchinokura, K
Nakao, H
Nishi, M
Fujii, Y
Hirota, K
Shirane, G
Wang, YJ
Kiryukhin, V
Birgeneau, RJ
机构：
[1] Univ Tokyo, Dept Adv Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan
[2] Cent Res Inst Elect Power Ind, Tokyo 2018511, Japan
[3] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan
[4] Tohoku Univ, Dept Phys, Aoba Ku, Sendai, Miyagi 9808578, Japan
[5] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA
[6] MIT, Dept Phys, Cambridge, MA 02139 USA
来源：
PHYSICA B | 2000年 / 284卷
关键词：
CuGeO3; first-order phase transition; spin-Peierls transition;
D O I：
10.1016/S0921-4526(99)02764-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We studied the temperature versus concentration(T-x) phase diagram in Cu1 - xMgxGeO3 by susceptibility measurements, synchrotron X-ray diffraction and neutron diffraction and the first-order phase transition between dimerized-antiferromagnetic and uniform-antiferromagnetic phases reported by Masuda et al. [Phys. Rev. Lett, 80 (1998) 4566] was established. We found that the T-x phase diagram of Cu1 - xMxGeO3(M = Zn,Ni) is similar to that of Cu1 - xMgxGeO3, while that of CuGe1 - xSixO3 is qualitatively different. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1637 / 1638
页数：2
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