Charge Transfer and Interface Engineering of the Pentacene and MoS2 Monolayer Complex

被引:31
|
作者
Shen, Na [1 ,2 ]
Tao, Guohua [1 ,2 ]
机构
[1] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
[2] Peking Univ, Shenzhen Key Lab New Energy Mat Design, Shenzhen 518055, Peoples R China
来源
ADVANCED MATERIALS INTERFACES | 2017年 / 4卷 / 06期
基金
美国国家科学基金会;
关键词
FEW-LAYER MOS2; NONADIABATIC DYNAMICS; MOLYBDENUM-DISULFIDE; THIN-FILMS; LARGE-AREA; TRANSISTORS; TRANSITION; TRANSPORT; GRAPHENE; ELECTRON;
D O I
10.1002/admi.201601083
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molecular doping of monolayer MoS2 provides a great opportunity to modulate its electronic properties for the potential applications in high performance devices. Density functional theory computations are performed to investigate the charge transfer and electrostatic potential modulation upon the adsorption of pentacene molecule on the surface of MoS2 monolayer (ML). Theoretical calculations indicate that interfacial charge transfer is negligible between pentacene and 2H-MoS2 ML while significant in the pentacene/1T-MoS2 ML complex, which is attributed to the match of energy levels near the Fermi level in the latter case. Moreover, molecular doping of pentacene induces substantial structure changes of the substrate resulting in large adsorption energy, which helps stabilize the 1T-MoS2 ML. Depending on different substrate phases and doping configurations, the interfacial dipole barrier and related work function of MoS2 ML may be modulated in a wide range of the order of about 1 eV. The findings therefore shed light on the possibility of developing the desired organic/inorganic complex for electrical and optoelectronic devices by molecular doping via charge transfer modulation and interface engineering.
引用
收藏
页数:12
相关论文
共 50 条
  • [1] Charge transfer and magnetization of a MoS2 monolayer at the Co(0001)/MoS2 interface
    Garandel, T.
    Arras, R.
    Marie, X.
    Renucci, P.
    Calmels, L.
    8TH JOINT EUROPEAN MAGNETIC SYMPOSIA (JEMS2016), 2017, 903
  • [2] Engineering of the surface and interface of monolayer MoS2
    Zhang, Guangyu
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2018, 255
  • [3] Band structure engineering of monolayer MoS2: a charge compensated codoping strategy
    Wan, Hui
    Xu, Liang
    Huang, Wei-Qing
    Zhou, Jia-Hui
    He, Chao-Ni
    Li, Xiaofan
    Huang, Gui-Fang
    Peng, P.
    Zhou, Zheng-Gui
    RSC ADVANCES, 2015, 5 (11) : 7944 - 7952
  • [4] Charge transfer across monolayer/bilayer MoS2 lateral interface and its influence on exciton and trion characteristics
    Kim, Hanul
    Yoon, Young-Gui
    Ko, Hayoung
    Kim, Soo Min
    Rho, Heesuk
    2D MATERIALS, 2019, 6 (02):
  • [5] Engineering the Interface of Cu/MoS2 Nanostructures for Improved Charge Transfer for Applications as PEC Anode Materials
    Shi, Bing-Yin
    Yao, Cheng-Bao
    Li, Hong-Yu
    Cao, Hong-Xu
    Zheng, Xin-Yu
    Liu, Yu
    Yin, Hai-Tao
    ACS APPLIED NANO MATERIALS, 2023, 6 (04) : 2972 - 2984
  • [6] Local Strain Engineering in Monolayer MoS2
    Tomita, Wataru
    Hashimoto, Katsushi
    Wang, Ziqian
    Chen, Mingwei
    Hirayama, Yoshiro
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [7] Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2
    Neumann, Christopher M.
    Okabe, Kye L.
    Yalon, Eilam
    Grady, Ryan W.
    Wong, H. -S. Philip
    Pop, Eric
    APPLIED PHYSICS LETTERS, 2019, 114 (08)
  • [8] Tuning electronic and optical properties of MoS2 monolayer via molecular charge transfer
    Jing, Yu
    Tan, Xin
    Zhou, Zhen
    Shen, Panwen
    JOURNAL OF MATERIALS CHEMISTRY A, 2014, 2 (40) : 16892 - 16897
  • [9] Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure
    Pandey, Tribhuwan
    Nayak, Avinash P.
    Liu, Jin
    Moran, Samuel T.
    Kim, Joon-Seok
    Li, Lain-Jong
    Lin, Jung-Fu
    Akinwande, Deji
    Singh, Abhishek K.
    SMALL, 2016, 12 (30) : 4063 - 4069
  • [10] Local engineering of topological phase in monolayer MoS2
    Wang, Zhichang
    Liu, Xiaoqiang
    Zhu, Jianqi
    You, Sifan
    Bian, Ke
    Zhang, Guangyu
    Feng, Ji
    Jiang, Ying
    SCIENCE BULLETIN, 2019, 64 (23) : 1750 - 1756