Universal Linear Relationship on Two-Step Photon Absorption Processes in In(Ga)As Quantum Dot Solar Cells

被引：0
作者：
Tamaki, Ryo [1 ]
Shoji, Yasushi [1 ]
Sugaya, Takeyoshi [2 ]
Okada, Yoshitaka [1 ]
机构：
[1] Univ Tokyo, RCAST, Meguro Ku, 4-6-1 Komaba, Tokyo 1538904, Japan
[2] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
III-V semiconductor materials; indium gallium arsenide; photovoltaic cells; quantum dots; spectroscopy; TRANSITIONS; EFFICIENCY;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Appropriate photo-carrier confinement in quantized levels is indispensable to achieve efficient two-step photon absorption in quantum dot intermediate band solar cells (QD-IBSCs). In this paper, host materials with varied bandgap energy were systematically investigated on In(Ga) As QDSCs. Fourier transform infrared (FTIR) photocurrent spectroscopy revealed that the IR absorption edge and the threshold temperature of two-step photon absorption processes in series of In(Ga) As QDSCs indicated a "universal linear relationship." The threshold temperature at 295 K was predicted with the absorption edge at 0.459 eV by extrapolating the universal relationship. It proposed strategy for cell optimization to realize efficient two-step photon absorption at ambient conditions.
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页码：1 / 4
页数：4
相关论文
共 22 条
[1]  
[Anonymous], 2012, Standard tables for reference solar spectral irradiance at air mass 1.5: direct normal and hemispherical on 37 degree tilted surface
[2]   Intermediate Band Solar Cell with Extreme Broadband Spectrum Quantum Efficiency [J].
Datas, A. ;
Lopez, E. ;
Ramiro, I. ;
Antolin, E. ;
Marti, A. ;
Luque, A. ;
Tamaki, R. ;
Shoji, Y. ;
Sogabe, T. ;
Okada, Y. .
PHYSICAL REVIEW LETTERS, 2015, 114 (15)
[3]   Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells [J].
Hwang, Jinyoung ;
Lee, Kyusang ;
Teran, Alan ;
Forrest, Stephen ;
Phillips, Jamie D. ;
Martin, Andrew J. ;
Millunchick, Joanna .
PHYSICAL REVIEW APPLIED, 2014, 1 (05)
[4]   The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells [J].
Jolley, Greg ;
Fu, Lan ;
Lu, Hao Feng ;
Tan, Hark Hoe ;
Jagadish, Chennupati .
PROGRESS IN PHOTOVOLTAICS, 2013, 21 (04) :736-746
[5]   Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels [J].
Luque, A ;
Marti, A .
PHYSICAL REVIEW LETTERS, 1997, 78 (26) :5014-5017
[6]  
Luque A, 2012, NAT PHOTONICS, V6, P146, DOI [10.1038/NPHOTON.2012.1, 10.1038/nphoton.2012.1]
[7]   Production of photocurrent due to intermediate-to-conduction-band transitions:: A demonstration of a key operating principle of the intermediate-band solar cell [J].
Marti, A. ;
Antolin, E. ;
Stanley, C. R. ;
Farmer, C. D. ;
Lopez, N. ;
Diaz, P. ;
Canovas, E. ;
Linares, P. G. ;
Luque, A. .
PHYSICAL REVIEW LETTERS, 2006, 97 (24)
[8]   Intermediate band solar cells: Recent progress and future directions [J].
Okada, Y. ;
Ekins-Daukes, N. J. ;
Kita, T. ;
Tamaki, R. ;
Yoshida, M. ;
Pusch, A. ;
Hess, O. ;
Phillips, C. C. ;
Farrell, D. J. ;
Yoshida, K. ;
Ahsan, N. ;
Shoji, Y. ;
Sogabe, T. ;
Guillemoles, J. -F. .
APPLIED PHYSICS REVIEWS, 2015, 2 (02)
[9]   Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell [J].
Okada, Yoshitaka ;
Morioka, Takayuki ;
Yoshida, Katsuhisa ;
Oshima, Ryuji ;
Shoji, Yasushi ;
Inoue, Tomoya ;
Kita, Takashi .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (02)
[10]   Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells [J].
Oshima, Ryuji ;
Takata, Ayami ;
Okada, Yoshitaka .
APPLIED PHYSICS LETTERS, 2008, 93 (08)
123