P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

被引：44

作者：

Fernandez, M. ^{[1
]}

Perpina, X. ^{[1
]}

Roig, J. ^{[2
]}

Vellvehi, M. ^{[1
]}

Bauwens, F. ^{[2
]}

Jorda, X. ^{[1
]}

Tack, M. ^{[2
]}

机构：

[1] CSIC, IMB, CNM, Barcelona 08193, Spain

[2] Corp Res & Dev, ON Semicond Belgium BVBA, Power Technol Ctr, B-9700 Oudenaarde, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 04期

关键词：

GaN HEMTs; p-GaN; short-circuit; reliability; ROBUSTNESS; IGBT;

D O I：

10.1109/LED.2017.2665163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for high-frequency and high-power density converters, but some of their applications (e.g., motor drives) require high robustness levels. In this scenario, 600 V normally-off p-GaN gate HEMTs are studied under Short-Circuit (SC) by experiment and physics-based simulations (drift-diffusion and thermodynamic models). A strong drain current reduction (> 70% after saturation peak) and high gate leakage current (tens of mA) are observed. All studied devices withstand the SC test at bus voltages up to 350 V, while fail at 400 V. Furthermore, its understanding is crucial to improving SC ruggedness in p-GaN HEMTs.

引用

页码：505 / 508

页数：4

共 28 条

[1] Thermal instability during short circuit of normally-off AlGaN/GaN HFETs [J].