The effect of flash annealing on the electrical properties of indium/carbon co-implants in silicon

被引：0
作者：
Gennaro, S. [1 ]
Giubertoni, D. [1 ]
Bersani, M. [1 ]
Foggiato, J. [2 ]
Yoo, W. S. [2 ]
Gwilliam, R. [3 ]
Anderle, M. [1 ]
机构：
[1] Ctr Ric Sci & Tecnol, ITCirst, Via Sommar 18, I-3805 Trento, Italy
[2] Wafermasters Inc, San Jose, CA 95112 USA
[3] Univ Surrey, Surrey Ion Beam Ctr, Adv Technol Inst, Sch Elect & Phys Sci, Guildford, Surrey GU2 7XH, England
来源：
ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷
关键词：
ion implantation; indium; shallow junctions; annealing; electrical activation;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Shallow Indium. implants and Indium-Carbon co-implants have been subjected to flash anneals and a combination of furnace treatments in order to evaluate the electrical properties of the implant and differentiate the behavior between low temperature and high temperature ultra fast thermal treatments. It is found that by using "flash" anneals, higher levels of electrical activation are achievable for the given experimental conditions. This behavior is related to the indium dose and to the dopant diffusion within the layer and its interaction with the carbon.
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页码：113 / +
页数：2
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